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TI(德州仪器) SN74BCT2827C
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  • TI(德州仪器) SN74BCT2827C
  • TI(德州仪器) SN74BCT2827C
  • TI(德州仪器) SN74BCT2827C
  • TI(德州仪器) SN74BCT2827C
  • TI(德州仪器) SN74BCT2827C
  • TI(德州仪器) SN74BCT2827C
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SN74BCT2827C

SN74BCT2827C

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具有三态输出的 10 通道、4.5V 至 5.5V 缓冲器

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  • 特性
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  • 封装 | 引脚 | 尺寸

These 10-bit buffers and bus drivers are specifically designed to drive the capacitive input characteristics of MOS DRAMs. They provide high-performance bus interface for wide data paths or buses carrying parity.

The 3-state control gate is a 2-input AND gate with active-low inputs so if either output-enable ( or ) input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state during power-up and power-down conditions. The outputs remain in the high-impedance state while the device is powered down.

The SN54BCT2827C is characterized for operation over the full military temperature range of -55°C to 125°C. The SN74BCT2827C is characterized for operation from 0°C to 70°C.

  • BiCMOS Design Substantially Reduces ICCZ
  • Output Ports Have Equivalent 25- Resistors; No External Resistors Are Required
  • Specifically Designed to Drive MOS DRAMs
  • 3-State Outputs Drive Bus Lines or Buffer Memory Address Registers
  • Flow-Through Architecture Optimizes PCB Layout
  • Power-Up High-Impedance State
  • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015
  • Package Options Include Plastic Small-Outline (DW) Packages, Ceramic Chip Carriers (FK) and Flatpacks (W), and Standard Plastic and Ceramic 300-mil DIPs (JT, NT)
Technology familyBCT
Supply voltage (min) (V)4.5
Supply voltage (max) (V)5.5
Number of channels10
IOL (max) (mA)12
Supply current (max) (µA)40000
IOH (max) (mA)-1
Input typeBipolar
Output type3-State
FeaturesDamping resistors, Over-voltage tolerant inputs, Power up 3-state, Very high speed (tpd 5-10ns)
RatingCatalog
Operating temperature range (°C)0 to 70
SOIC (DW)24159.65 mm² 15.5 x 10.3
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