The TLE2027 contains innovative circuit design expertise and high-quality process control techniques to produce a level of ac performance and dc precision previously unavailable in single operational amplifiers. Manufactured using TI's state-of-the-art Excalibur process, these devices allow upgrades to systems that use lower-precision devices.
In the area of dc precision, the TLE2027 offers maximum offset voltages of 100 µV, common-mode rejection ratio of 131 dB (typ), supply voltage rejection ratio of 144 dB (typ), and dc gain of 45 V/µV (typ).
The ac performance of the TLE2027 is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55° of phase margin, and noise voltage specifications of 3.3 nV/
Hz at frequencies of 10 Hz and 1 kHz, respectively.
The TLE2027 is available in a wide variety of packages, including the industry-standard 8-pin small-outline version for high-density system applications. The device is characterized for operation over the full military temperature range of –55°C to 125°C.
(1) Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.
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| Number of channels | 1 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 38 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 8 |
| Rail-to-rail | No |
| GBW (typ) (MHz) | 13 |
| Slew rate (typ) (V/µs) | 2.8 |
| Vos (offset voltage at 25°C) (max) (mV) | 0.1 |
| Iq per channel (typ) (mA) | 3.8 |
| Vn at 1 kHz (typ) (nV√Hz) | 2.5 |
| Rating | HiRel Enhanced Product |
| Operating temperature range (°C) | -55 to 125 |
| Offset drift (typ) (µV/°C) | 0.4 |
| Input bias current (max) (pA) | 90000 |
| CMRR (typ) (dB) | 131 |
| Iout (typ) (A) | 0.035 |
| Architecture | Bipolar |
| Input common mode headroom (to negative supply) (typ) (V) | 2 |
| Input common mode headroom (to positive supply) (typ) (V) | -2 |
| Output swing headroom (to negative supply) (typ) (V) | 1.5 |
| Output swing headroom (to positive supply) (typ) (V) | -1.8 |
| SOIC (D) | 8 | 29.4 mm² 4.9 x 6 |
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