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TI(德州仪器) LMP2012QML-SP
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  • TI(德州仪器) LMP2012QML-SP
  • TI(德州仪器) LMP2012QML-SP
  • TI(德州仪器) LMP2012QML-SP
  • TI(德州仪器) LMP2012QML-SP
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LMP2012QML-SP

LMP2012QML-SP

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双路、高精度、轨到轨输出运算放大器

产品详情
  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

The LMP2012 offers unprecedented accuracy and stability. This device utilizes patented techniques to measure and continually correct the input offset error voltage. The result is an amplifier which is ultra stable over time and temperature. It has excellent CMRR and PSRR ratings, and does not exhibit the familiar 1/f voltage and current noise increase that plagues traditional amplifiers. The combination of the LMP2012 characteristics makes it a good choice for transducer amplifiers, high gain configurations, ADC buffer amplifiers, DAC I-V conversion, and any other 2.7V-5V application requiring precision and long term stability.

Other useful benefits of the LMP2012 are rail-rail output, low supply current of 930 μA, and wide gain-bandwidth product of 3 MHz. These extremely versatile features found in the LMP2012 provide high performance and ease of use.

The QMLV version of the LMP2012 has been rated to tolerate a total dose level of 50krad/(Si) radiation by test method 1019 of MIL-STD-883.

  • Total Ionizing Dose 50 krad(Si)
  • ELDRS Free 50 krad(Si)
  • TCVIO Temperature Sensitivity (Typical) 0.015 µV/°C


  • (For VS = 5V, Typical Unless Otherwise Noted)

  • Low Ensured VIO over Temperature 60 µV
  • Low Noise with no 1/f 35nV/√Hz
  • High CMRR 90 dB
  • High PSRR 90 dB
  • High AVOL 85 dB
  • Wide Gain-Bandwidth Product 3MHz
  • High Slew Rate 4V/µs
  • Rail-to-Rail Output 30mV
  • No External Capacitors Required

All trademarks are the property of their respective owners.

Number of channels2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)2.7
Vos (offset voltage at 25°C) (max) (mV)0.036
GBW (typ) (MHz)3
FeaturesZero Drift
Slew rate (typ) (V/µs)4
Rail-to-railIn to V-, Out
Offset drift (typ) (µV/°C)0.015
Iq per channel (typ) (mA)0.93
Vn at 1 kHz (typ) (nV√Hz)35
CMRR (typ) (dB)130
RatingSpace
Operating temperature range (°C)-55 to 125
Input bias current (max) (pA)4
Iout (typ) (A)0.015
ArchitectureCMOS
Input common mode headroom (to negative supply) (typ) (V)-0.3
Input common mode headroom (to positive supply) (typ) (V)-1.8
Output swing headroom (to negative supply) (typ) (V)0.04
Output swing headroom (to positive supply) (typ) (V)-0.022
CFP (NAC)1062.9285 mm² 9.91 x 6.35
DIESALE (Y)See data sheet
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