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TI(德州仪器) LMG1025-Q1
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  • TI(德州仪器) LMG1025-Q1
  • TI(德州仪器) LMG1025-Q1
  • TI(德州仪器) LMG1025-Q1
  • TI(德州仪器) LMG1025-Q1
  • TI(德州仪器) LMG1025-Q1
  • TI(德州仪器) LMG1025-Q1
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LMG1025-Q1

LMG1025-Q1

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适用于窄脉冲应用、具有 5V UVLO 的汽车类 7A/5A 单通道低侧栅极驱动器

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The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25-ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300-ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9-ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.

The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.

  • AEC-Q100 grade 1 qualified
  • 1.25-ns typical minimum input pulse width
  • 2.6-ns typical rising propagation delay
  • 2.9-ns typical falling propagation delay
  • 300-ps typical pulse distortion
  • Independent 7-A pull-up and 5-A pull-down current
  • 650-ps typical rise time (220-pF load)
  • 850-ps typical fall time (220-pF load)
  • 2-mm x 2-mm QFN package
  • Inverting and non-inverting inputs
  • UVLO and over-temperature protection
  • Single 5-V supply voltage
Number of channels1
Power switchGaNFET, MOSFET
Peak output current (A)7
Input VCC (min) (V)4.75
Input VCC (max) (V)5.25
Features1.25-ns Pulse Width
Operating temperature range (°C)-40 to 125
Rise time (ns)0.65
Fall time (ns)0.85
Propagation delay time (µs)0.0029
Input thresholdCMOS, TTL
Channel input logicTTL
Input negative voltage (V)0
RatingAutomotive
Undervoltage lockout (typ) (V)4.19
Driver configurationDual inputs
WSON (DEE)64 mm² 2 x 2
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