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TI(德州仪器) TLV342
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  • TI(德州仪器) TLV342
  • TI(德州仪器) TLV342
  • TI(德州仪器) TLV342
  • TI(德州仪器) TLV342
  • TI(德州仪器) TLV342
  • TI(德州仪器) TLV342
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TLV342

TLV342

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双路、5.5V、2.2MHz 运算放大器

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The TLV34xx devices are single and dual CMOS operational amplifiers, respectively, with low-voltage, low-power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low input bias current of 1 pA (typical) and an offset voltage of
0.3 mV (typical). For applications requiring excellent dc precision, the A grade (TLV34xA) has a low offset voltage of 1.25 mV (maximum) at 25°C.

These single-supply amplifiers are designed specifically for ultra-low-voltage (1.5 V to 5 V) operation, with a common-mode input voltage range that typically extends from –0.2 V to 0.5 V from the positive supply rail.

The TLV341 (single) and TLV342 (dual) in the RUG package also offer a shutdown (SHDN) pin that can be used to disable the device. In shutdown mode, the supply current is reduced to 45 pA (typical). Offered in both the SOT-23 and smaller SC70 packages, the TLV341 is suitable for the most space-constrained applications. The dual TLV342 is offered in the standard SOIC, VSSOP, and X2QFN packages.

An extended industrial temperature range from –40°C to 125°C makes the TLV34xx suitable in a wide variety of commercial and industrial applications.

  • 1.8-V and 5-V Performance
  • Low Offset (A Grade)
    • 1.25 mV Maximum (25°C)
    • 1.7 mV Maximum (–40°C to 125°C)
  • Rail-to-Rail Output Swing
  • Wide Common-Mode Input Voltage Range: –0.2 V
    to (V+ – 0.5 V)
  • Input Bias Current: 1 pA (Typical)
  • Input Offset Voltage: 0.3 mV (Typical)
  • Low Supply Current: 70 µA/Channel
  • Low Shutdown Current:
    10 pA (Typical) Per Channel
  • Gain Bandwidth: 2.3 MHz (Typical)
  • Slew Rate: 0.9 V/µs (Typical)
  • Turnon Time From Shutdown: 5 µs (Typical)
  • Input Referred Voltage Noise (at 10 kHz):
    20 nV/√Hz
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (HBM)
    • 750-V Charged-device model (CDM)
Number of channels2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)1.5
Rail-to-railOut
GBW (typ) (MHz)2.2
Slew rate (typ) (V/µs)0.9
Vos (offset voltage at 25°C) (max) (mV)4
Iq per channel (typ) (mA)0.07
Vn at 1 kHz (typ) (nV√Hz)33
RatingCatalog
Operating temperature range (°C)-40 to 125
Offset drift (typ) (µV/°C)1.9
FeaturesSmall Size
Input bias current (max) (pA)200
CMRR (typ) (dB)90
Iout (typ) (A)0.113
ArchitectureCMOS
Input common mode headroom (to negative supply) (typ) (V)-0.2
Input common mode headroom (to positive supply) (typ) (V)-0.5
Output swing headroom (to negative supply) (typ) (V)0.018
Output swing headroom (to positive supply) (typ) (V)-0.07
SOIC (D)829.4 mm² 4.9 x 6
VSSOP (DGK)814.7 mm² 3 x 4.9
X2QFN (RUG)103 mm² 1.5 x 2
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