The UCC2720x-Q1 family of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side and low-side drivers with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward, and active-clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1 ns between the turnon and turnoff of each other.
An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers, forcing the outputs low if the drive voltage is below the specified threshold.
Two versions of the UCC2720x-Q1 are offered – the UCC27200-Q1 has high-noise-immune CMOS input thresholds, and the UCC27201-Q1 has TTL-compatible thresholds.
Both devices are offered in the 8-pin SO PowerPAD (DDA) package.
For all available packages, see the orderable addendum at the end of the data sheet.All trademarks are the property of their respective owners.
| Bus voltage (max) (V) | 110 |
| Power switch | MOSFET |
| Input VCC (min) (V) | 8 |
| Input VCC (max) (V) | 17 |
| Peak output current (A) | 3 |
| Operating temperature range (°C) | -40 to 125 |
| Undervoltage lockout (typ) (V) | 8 |
| Rating | Automotive |
| Propagation delay time (µs) | 0.02 |
| Rise time (ns) | 8 |
| Fall time (ns) | 7 |
| Iq (mA) | 0.001 |
| Input threshold | CMOS |
| Channel input logic | CMOS |
| Negative voltage handling at HS pin (V) | -5 |
| Driver configuration | Noninverting |
| HSOIC (DDA) | 8 | 29.4 mm² 4.9 x 6 |
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