The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.
The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.
| Bus voltage (max) (V) | 24 |
| Power switch | MOSFET |
| Input VCC (min) (V) | 6.8 |
| Input VCC (max) (V) | 8 |
| Peak output current (A) | 6 |
| Operating temperature range (°C) | -40 to 125 |
| Undervoltage lockout (typ) (V) | 3.5 |
| Rating | Catalog |
| Propagation delay time (µs) | 0.014 |
| Rise time (ns) | 10 |
| Fall time (ns) | 5 |
| Iq (mA) | 0.35 |
| Input threshold | TTL |
| Channel input logic | TTL |
| Negative voltage handling at HS pin (V) | 0 |
| Features | Synchronous Rectification |
| Driver configuration | Single |
| SOIC (D) | 8 | 29.4 mm² 4.9 x 6 |
| VSON (DRB) | 8 | 9 mm² 3 x 3 |
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