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TI(德州仪器) LM5100B
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  • TI(德州仪器) LM5100B
  • TI(德州仪器) LM5100B
  • TI(德州仪器) LM5100B
  • TI(德州仪器) LM5100B
  • TI(德州仪器) LM5100B
  • TI(德州仪器) LM5100B
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LM5100B

LM5100B

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具有 8V UVLO 和 CMOS 输入的 2A、100V 半桥栅极驱动器

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The LM5100A/B/C and LM5101A/B/C high-voltage gate drivers are designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of operating with supply voltages up to 100 V. The A versions provide a full 3-A of gate drive, while the B and C versions provide 2 A and 1 A, respectively. The outputs are independently controlled with CMOS input thresholds (LM5100A/B/C) or TTL input thresholds (LM5101A/B/C).

An integrated high-voltage diode is provided to charge the high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. These devices are available in the standard SOIC-8 pin, SO PowerPAD-8 pin, and the WSON-10 pin packages. The LM5100C and LM5101C are also available in MSOP-PowerPAD-8 package. The LM5101A is also available in WSON-8 pin package.

  • Drives Both a High-Side and Low-Side N-Channel
    MOSFETs
  • Independent High- and Low-Driver Logic Inputs
  • Bootstrap Supply Voltage up to 118 V DC
  • Fast Propagation Times (25-ns Typical)
  • Drives 1000-pF Load With 8-ns Rise and Fall
    Times
  • Excellent Propagation Delay Matching (3-ns
    Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • Pin Compatible With HIP2100/HIP2101
Bus voltage (max) (V)100
Power switchMOSFET
Input VCC (min) (V)9
Input VCC (max) (V)14
Peak output current (A)2
Operating temperature range (°C)-40 to 125
Undervoltage lockout (typ) (V)8
RatingCatalog
Propagation delay time (µs)0.025
Rise time (ns)10
Fall time (ns)10
Iq (mA)0.01
Input thresholdCMOS
Channel input logicCMOS
Negative voltage handling at HS pin (V)-1
Driver configurationDual, Independent
SOIC (D)829.4 mm² 4.9 x 6
WSON (DPR)1016 mm² 4 x 4
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