The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.
| Bus voltage (max) (V) | 90 |
| Power switch | MOSFET |
| Input VCC (min) (V) | 8 |
| Input VCC (max) (V) | 14 |
| Peak output current (A) | 1 |
| Operating temperature range (°C) | -40 to 125 |
| Undervoltage lockout (typ) (V) | 8 |
| Rating | Catalog |
| Propagation delay time (µs) | 0.025 |
| Rise time (ns) | 15 |
| Fall time (ns) | 15 |
| Iq (mA) | 0.01 |
| Input threshold | TTL |
| Channel input logic | TTL |
| Negative voltage handling at HS pin (V) | -1 |
| Driver configuration | Dual, Independent |
| SOIC (D) | 8 | 29.4 mm² 4.9 x 6 |
| WSON (NGT) | 8 | 16 mm² 4 x 4 |
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