The LM5112 device MOSFET gate driver provides high peak gate drive current in the tiny 6-pin WSON package (SOT-23 equivalent footprint) or an 8-pin exposed-pad MSOP package with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7 A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turnon voltage. The LM5112 device provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.
| Number of channels | 1 |
| Power switch | MOSFET |
| Peak output current (A) | 7 |
| Input VCC (min) (V) | 3.5 |
| Input VCC (max) (V) | 14 |
| Features | Negative Output Voltage Capability |
| Operating temperature range (°C) | -40 to 125 |
| Rise time (ns) | 14 |
| Fall time (ns) | 12 |
| Propagation delay time (µs) | 0.025 |
| Input threshold | TTL |
| Channel input logic | Inverting, Non-Inverting |
| Input negative voltage (V) | 0 |
| Rating | Catalog |
| Undervoltage lockout (typ) (V) | 3 |
| Driver configuration | Single |
| HVSSOP (DGN) | 8 | 14.7 mm² 3 x 4.9 |
| WSON (NGG) | 6 | 9 mm² 3 x 3 |
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