The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Undervoltage lockout protection is also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC package or the thermally enhanced
MSOP-PowerPAD package.
| Number of channels | 2 |
| Power switch | MOSFET |
| Peak output current (A) | 5 |
| Input VCC (min) (V) | 3.5 |
| Input VCC (max) (V) | 14 |
| Features | UVLO Configured to Drive PFET through OUT_A |
| Operating temperature range (°C) | -40 to 125 |
| Rise time (ns) | 14 |
| Fall time (ns) | 12 |
| Propagation delay time (µs) | 0.025 |
| Input threshold | TTL |
| Channel input logic | Combination, Inverting, Non-Inverting |
| Input negative voltage (V) | 0 |
| Rating | Catalog |
| Undervoltage lockout (typ) (V) | 3 |
| Driver configuration | Dual, Independent |
| HVSSOP (DGN) | 8 | 14.7 mm² 3 x 4.9 |
| SOIC (D) | 8 | 29.4 mm² 4.9 x 6 |
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