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TI(德州仪器) LM5104
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  • TI(德州仪器) LM5104
  • TI(德州仪器) LM5104
  • TI(德州仪器) LM5104
  • TI(德州仪器) LM5104
  • TI(德州仪器) LM5104
  • TI(德州仪器) LM5104
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LM5104

LM5104

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具有 8V UVLO 和自适应延迟的 2A、100V 半桥栅极驱动器

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The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package
Bus voltage (max) (V)100
Power switchMOSFET
Input VCC (min) (V)9
Input VCC (max) (V)14
Peak output current (A)2
Operating temperature range (°C)-40 to 125
Undervoltage lockout (typ) (V)8
RatingCatalog
Propagation delay time (µs)0.035
Rise time (ns)10
Fall time (ns)10
Iq (mA)0.01
Input thresholdTTL
Channel input logicTTL
Negative voltage handling at HS pin (V)-1
Driver configurationDual, Single
SOIC (D)829.4 mm² 4.9 x 6
WSON (DPR)1016 mm² 4 x 4
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