h1_key

TI(德州仪器) THS4631
德州仪器 (TI) 全系列产品在线购买
  • TI(德州仪器) THS4631
  • TI(德州仪器) THS4631
  • TI(德州仪器) THS4631
  • TI(德州仪器) THS4631
  • TI(德州仪器) THS4631
  • TI(德州仪器) THS4631
立即查看
您当前的位置: 首页 > 放大器 > 运算放大器 (op amps) > 高速运算放大器 (GBW ≥ 50MHz) > THS4631
THS4631

THS4631

正在供货

高速 FET 输入运算放大器

产品详情
  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

The THS4631 is a high-speed, FET-input operational amplifier designed for applications requiring wideband operation, high-input impedance, and high-power supply voltages. By providing a 210-MHz gain bandwidth product, ±15-V supply operation, and 100-pA input bias current, the THS4631 is capable of simultaneous wideband transimpedance gain and large output signal swing. The fast 1000 V/µs slew rate allows for fast settling times and good harmonic distortion at high frequencies. Low current and voltage noise allow amplification of extremely low-level input signals while still maintaining a large signal-to-noise ratio.

The characteristics of the THS4631 make it ideally suited for use as a wideband photodiode amplifier. Photodiode output current is a prime candidate for transimpedance amplification as shown below. Other potential applications include test and measurement systems requiring high-input impedance, ADC and DAC buffering, high-speed integration, and active filtering.

The THS4631 is offered in an 8-pin SOIC (D), and the 8-pin SOIC (DDA) and MSOP (DGN) with PowerPAD™ package.

  • High Bandwidth:
    • 325 MHz in Unity Gain
    • 210 MHz Gain Bandwidth Product
  • High Slew Rate:
    • 900 V/µs (G = 2)
    • 1000 V/µs (G = 5)
  • Low Distortion of –76 dB, SFDR at 5 MHz
  • Maximum Input Bias Current: 100 pA
  • Input Voltage Noise: 7 nV/√Hz
  • Maximum Input Offset Voltage: 500 µV at 25°C
  • Low Offset Drift: 2.5 µV/°C
  • Input Impedance: 109 || 3.9 pF
  • Wide Supply Range: ± 5 V to ± 15 V
  • High Output Current: 95 mA
ArchitectureFET / CMOS Input, Voltage FB
Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)10
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)32
GBW (typ) (MHz)210
BW at Acl (MHz)325
Acl, min spec gain (V/V)1
Slew rate (typ) (V/µs)1000
Vn at flatband (typ) (nV√Hz)7
Vn at 1 kHz (typ) (nV√Hz)7
Iq per channel (typ) (mA)11.5
Vos (offset voltage at 25°C) (max) (mV)0.5
Rail-to-railNo
RatingCatalog
Operating temperature range (°C)-40 to 85
CMRR (typ) (dB)95
Input bias current (max) (pA)100
Offset drift (typ) (µV/°C)2.5
Iout (typ) (mA)95
2nd harmonic (dBc)76
3rd harmonic (dBc)94
Frequency of harmonic distortion measurement (MHz)5
HSOIC (DDA)829.4 mm² 4.9 x 6
HVSSOP (DGN)814.7 mm² 3 x 4.9
SOIC (D)829.4 mm² 4.9 x 6
产品购买
  • 商品型号
  • 封装
  • 工作温度
  • 包装
  • 价格
  • 现货库存
  • 操作
10s
温馨提示:
订单商品问题请移至我的售后服务提交售后申请,其他需投诉问题可移至我的投诉提交,我们将在第一时间给您答复
返回顶部