The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control.
The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.
| VDS (max) (V) | 650 |
| RDS(on) (mΩ) | 120 |
| ID (max) (A) | 8.5 |
| Features | Bottom-side cooled, Cycle-by-cycle overcurrent protection, Enable pin, Low Quiescent Current, Low standby current, Overtemperature protection, Slew Rate Control, Wide input voltage |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 125 |
| VQFN (REQ) | 38 | 42.4 mm² 8 x 5.3 |
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