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TI(德州仪器) LMV341
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  • TI(德州仪器) LMV341
  • TI(德州仪器) LMV341
  • TI(德州仪器) LMV341
  • TI(德州仪器) LMV341
  • TI(德州仪器) LMV341
  • TI(德州仪器) LMV341
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LMV341

LMV341

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单路、5.5V、1MHz、高输出电流 (75mA) 运算放大器

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The LMV34x devices are single, dual, and quad CMOS operational amplifiers, respectively, with low voltage, low power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low input bias current of 1 pA (typical) and an offset voltage of 0.25 mV (typical). The single-supply amplifier is designed specifically for low-voltage (2.7 V to 5 V) operation, with a wide common-mode input voltage range that typically extends from –0.2 V to 0.8 V from the positive supply rail. The LMV341 (single) also offers a shutdown (SHDN) pin that can be used to disable the device. In shutdown mode, the supply current is reduced to 33 nA (typical). Additional features of the family are a 20-nV/√Hz voltage noise at 10 kHz, 1-MHz unity-gain bandwidth, 1-V/µs slew rate, and 100-µA current consumption per channel.

Offered in both the SOT-23 and smaller SC70 packages, the LMV341 is suitable for the most space-constraint applications. The LMV342 dual device is offered in the standard SOIC and VSSOP packages. An extended industrial temperature range from –40°C to 125°C makes these devices suitable in a wide variety of commercial and industrial environments.

  • 2.7-V and 5-V Performance
  • Rail-to-Rail Output Swing
  • Input Bias Current:1 pA (Typical)
  • Input Offset Voltage: 0.25 mV (Typical)
  • Low Supply Current: 100 µA (Typical)
  • Low Shutdown Current: 45 pA (Typical)
  • Gain Bandwidth of 1 MHz (Typical)
  • Slew Rate: 1 V/µs (Typical)
  • Turnon Time From Shutdown: 5 µs (Typical)
  • Input Referred Voltage Noise (at 10 kHz):
    20 nV/√Hz
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (HBM)
    • 750-V Charged-device model (CDM)
Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)2.5
Rail-to-railIn to V-, Out
GBW (typ) (MHz)1
Slew rate (typ) (V/µs)1
Vos (offset voltage at 25°C) (max) (mV)4
Iq per channel (typ) (mA)0.107
Vn at 1 kHz (typ) (nV√Hz)39
RatingCatalog
Operating temperature range (°C)-40 to 125
Offset drift (typ) (µV/°C)1.9
FeaturesShutdown
Input bias current (max) (pA)200
CMRR (typ) (dB)86
Iout (typ) (A)0.075
ArchitectureCMOS
Input common mode headroom (to negative supply) (typ) (V)0
Input common mode headroom (to positive supply) (typ) (V)-0.8
Output swing headroom (to negative supply) (typ) (V)0.007
Output swing headroom (to positive supply) (typ) (V)-0.007
SOT-23 (DBV)68.12 mm² 2.9 x 2.8
SOT-SC70 (DCK)64.2 mm² 2 x 2.1
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