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TI(德州仪器) TLC3704-Q1
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  • TI(德州仪器) TLC3704-Q1
  • TI(德州仪器) TLC3704-Q1
  • TI(德州仪器) TLC3704-Q1
  • TI(德州仪器) TLC3704-Q1
  • TI(德州仪器) TLC3704-Q1
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TLC3704-Q1

TLC3704-Q1

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汽车类四通道微功耗 LinCMOS™ 电压比较器

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The TLC3704 consists of four independent micropower voltage comparators designed to operate from a single supply and be compatible with modern HCMOS logic systems. They are functionally similar to the LM339 but use 1/20th the power for similar response times. The push-pull CMOS output stage drives capacitive loads directly without a power-consuming pullup resistor to achieve the stated response time. Eliminating the pullup resistor not only reduces power dissipation, but also saves board space and component cost. The output stage is also fully compatible with TTL requirements.

Texas Instruments LinCMOS™ process offers superior analog performance to standard CMOS processes. Along with the standard CMOS advantages of low power without sacrificing speed, high input impedance, and low bias currents, the LinCMOS process offers extremely stable input offset voltages with large differential input voltages. This characteristic makes it possible to build reliable CMOS comparators.

The TLC3704Q is characterized for operation from –40°C to 125°C.

  • Qualified for Automotive Applications
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 50 V Using Machine Model (C = 200 pF, R = 0)
  • Push-Pull CMOS Output Drives Capacitive Loads Without Pullup Resistor, IO = ± 8 mA
  • Very Low Power . . . 200 µW Typ at 5 V
  • Fast Response Time . . . tPLH = 2.7 µs Typ With 5-mV Overdrive
  • Single Supply Operation . . . 3 V to 16 V
  • On-Chip ESD Protection

LinCMOS is a trademark of Texas Instruments Incorporated.

Number of channels4
Output typePush-Pull
Propagation delay time (µs)1.1
Vs (max) (V)16
Vs (min) (V)3
Vos (offset voltage at 25°C) (max) (mV)5
Iq per channel (typ) (mA)0.009
Input bias current (±) (max) (nA)0.03
Rail-to-railIn to V-
RatingAutomotive
Operating temperature range (°C)-40 to 125
VICR (max) (V)15
VICR (min) (V)0
SOIC (D)1451.9 mm² 8.65 x 6
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