这款采用 5mm × 6mm SON 封装的 40V、0.79mΩ、 NexFET™功率 MOSFET 的设计旨在追求以最大限度降低功率转换应用中的功率 损耗。
| VDS (V) | 40 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 1.6 |
| Rds(on) at VGS=10 V (max) (mΩ) | 0.96 |
| IDM - pulsed drain current (max) (A) | 400 |
| QG (typ) (nC) | 118 |
| QGD (typ) (nC) | 21 |
| QGS (typ) (nC) | 28 |
| VGS (V) | 20 |
| VGSTH typ (typ) (V) | 1.7 |
| ID - silicon limited at TC=25°C (A) | 300 |
| ID - package limited (A) | 100 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |
| VSON-CLIP (DNK) | 8 | 30 mm² 6 x 5 |