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TI(德州仪器) TLE2037A-Q1
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  • TI(德州仪器) TLE2037A-Q1
  • TI(德州仪器) TLE2037A-Q1
  • TI(德州仪器) TLE2037A-Q1
  • TI(德州仪器) TLE2037A-Q1
  • TI(德州仪器) TLE2037A-Q1
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TLE2037A-Q1

TLE2037A-Q1

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汽车类 Excalibur 低噪声高速精密运算放大器

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The TLE20x7 and TLE20x7A contain innovative circuit design expertise and high-quality process control techniques to produce a level of ac performance and dc precision previously unavailable in single operational amplifiers. Manufactured using Texas Instruments state-of-the-art Excalibur process, these devices allow upgrades to systems that use lower-precision devices.

In the area of dc precision, the TLE20x7 and TLE20x7A offer maximum offset voltages of 100 µV and 25 µV, respectively, common-mode rejection ratio of 131 dB (typ), supply voltage rejection ratio of 144 dB (typ), and dc gain of 45 V/µV (typ).

The ac performance of the TLE2027 and TLE2037 is highlighted by a typical unity-gain bandwidth specification of 15 MHz, 55° of phase margin, and noise voltage specifications of 3.3 nV/√Hz and 2.5 nV/√Hz at frequencies of 10 Hz and 1 kHz respectively. The TLE2037 and TLE2037A have been decompensated for faster slew rate (–7.5 V/µs, typical) and wider bandwidth (50 MHz). To ensure stability, the TLE2037 and TLE2037A should be operated with a closed-loop gain of 5 or greater.

Both the TLE20x7 and TLE20x7A are available in a wide variety of packages, including the industry-standard 8-pin small-outline version for high-density system applications. The Q-suffix devices are characterized for operation from –40°C to 125°C.

  • Qualified for Automotive Applications
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Outstanding Combination of dc Precision and AC Performance:
    • Unity-Gain Bandwidth... 15 MHz Typ
    • Vn... 3.3 nV/√Hz at f = 10 Hz Typ, 2.5 nV/√Hz at f = 1 kHz Typ
    • VIO... 25 µV Max
    • AVD... 45 V/µV Typ With RL = 2 kΩ, 19 V/µV Typ With RL = 600 Ω
  • Available in Standard-Pinout Small-Outline Package
  • Output Features Saturation Recovery Circuitry
  • Macromodels and Statistical information

Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)38
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)8
Vos (offset voltage at 25°C) (max) (mV)0.025
GBW (typ) (MHz)50
FeaturesDecompensated
Slew rate (typ) (V/µs)7.5
Rail-to-railNo
Offset drift (typ) (µV/°C)0.2
Iq per channel (typ) (mA)3.8
Vn at 1 kHz (typ) (nV√Hz)2.5
CMRR (typ) (dB)131
RatingAutomotive
Operating temperature range (°C)-40 to 125
Input bias current (max) (pA)90000
Iout (typ) (A)0.05
ArchitectureBipolar
Input common mode headroom (to negative supply) (typ) (V)2
Input common mode headroom (to positive supply) (typ) (V)-2
Output swing headroom (to negative supply) (typ) (V)1.5
Output swing headroom (to positive supply) (typ) (V)-1.8
THD + N at 1 kHz (typ) (%)0.002
SOIC (D)829.4 mm² 4.9 x 6
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