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TI(德州仪器) THS3121
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  • TI(德州仪器) THS3121
  • TI(德州仪器) THS3121
  • TI(德州仪器) THS3121
  • TI(德州仪器) THS3121
  • TI(德州仪器) THS3121
  • TI(德州仪器) THS3121
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THS3121

THS3121

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单路、低噪声、高输出驱动、475mA 电流反馈放大器

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  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

The THS3120 and THS3121 are low-noise, high-voltage, high output current drive, current-feedback amplifiers designed to operate over a wide supply range of ±5 V to ±15 V for today's high-performance applications.

The THS3120 offers a power saving mode by providing a power-down pin for reducing the 7-mA quiescent current of the device, when the device is not active.

These amplifiers provide well-regulated ac performance characteristics. Most notably, the 0.1-dB flat bandwidth is exceedingly high, reaching beyond 90 MHz. The unity-gain bandwidth of 130 MHz allows for good distortion characteristics at 10 MHz. Coupled with high 1700-V/µs slew rate, the THS3120 and THS3121 amplifiers allow for high output voltage swings at high frequencies.

The THS3120 and THS3121 are offered in an SOIC-8 (D) package and an MSOP-8 (DGN) PowerPAD package.

  • Low Noise:
    • 1 pA/√Hz Noninverting Current Noise
    • 10 pA/√Hz Inverting Current Noise
    • 2.5 nV/√Hz Voltage Noise
  • High Output Current Drive: 475 mA
  • High Slew Rate:
    • 1700 V/µs (RL = 50 , VO = 8 VPP)
  • Wide Bandwidth: 120 MHz (G = 2, RL = 50 )
  • Wide Supply Range: ±5 V to ±15 V
  • Power-Down Feature: (THS3120 Only)
  • APPLICATIONS
    • Video Distribution
    • Power FET Driver
    • Pin Driver
    • Capacitive Load Driver

All trademarks are the property of their respective owners.

ArchitectureCurrent FB
Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)10
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)30
GBW (typ) (MHz)130
BW at Acl (MHz)130
Acl, min spec gain (V/V)1
Slew rate (typ) (V/µs)1500
Vn at flatband (typ) (nV√Hz)2.5
Vn at 1 kHz (typ) (nV√Hz)2.5
Iq per channel (typ) (mA)3.5
Vos (offset voltage at 25°C) (max) (mV)10
Rail-to-railNo
RatingCatalog
Operating temperature range (°C)-40 to 85
CMRR (typ) (dB)70
Input bias current (max) (pA)4000000
Offset drift (typ) (µV/°C)10
Iout (typ) (mA)475
2nd harmonic (dBc)51
3rd harmonic (dBc)50
Frequency of harmonic distortion measurement (MHz)10
HVSSOP (DGN)814.7 mm² 3 x 4.9
SOIC (D)829.4 mm² 4.9 x 6
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