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TI(德州仪器) LMV344
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  • TI(德州仪器) LMV344
  • TI(德州仪器) LMV344
  • TI(德州仪器) LMV344
  • TI(德州仪器) LMV344
  • TI(德州仪器) LMV344
  • TI(德州仪器) LMV344
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LMV344

LMV344

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四路、5.5V、1MHz、高输出电流 (75mA) 运算放大器

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  • 封装 | 引脚 | 尺寸

The LMV34x devices are single, dual, and quad CMOS operational amplifiers, respectively, with low voltage, low power, and rail-to-rail output swing capabilities. The PMOS input stage offers an ultra-low input bias current of 1 pA (typical) and an offset voltage of 0.25 mV (typical). The single-supply amplifier is designed specifically for low-voltage (2.7 V to 5 V) operation, with a wide common-mode input voltage range that typically extends from –0.2 V to 0.8 V from the positive supply rail. The LMV341 (single) also offers a shutdown (SHDN) pin that can be used to disable the device. In shutdown mode, the supply current is reduced to 33 nA (typical). Additional features of the family are a 20-nV/√Hz voltage noise at 10 kHz, 1-MHz unity-gain bandwidth, 1-V/µs slew rate, and 100-µA current consumption per channel.

Offered in both the SOT-23 and smaller SC70 packages, the LMV341 is suitable for the most space-constraint applications. The LMV342 dual device is offered in the standard SOIC and VSSOP packages. An extended industrial temperature range from –40°C to 125°C makes these devices suitable in a wide variety of commercial and industrial environments.

  • 2.7-V and 5-V Performance
  • Rail-to-Rail Output Swing
  • Input Bias Current:1 pA (Typical)
  • Input Offset Voltage: 0.25 mV (Typical)
  • Low Supply Current: 100 µA (Typical)
  • Low Shutdown Current: 45 pA (Typical)
  • Gain Bandwidth of 1 MHz (Typical)
  • Slew Rate: 1 V/µs (Typical)
  • Turnon Time From Shutdown: 5 µs (Typical)
  • Input Referred Voltage Noise (at 10 kHz):
    20 nV/√Hz
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (HBM)
    • 750-V Charged-device model (CDM)
Number of channels4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)5.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)2.5
Rail-to-railIn to V-, Out
GBW (typ) (MHz)1
Slew rate (typ) (V/µs)1
Vos (offset voltage at 25°C) (max) (mV)5
Iq per channel (typ) (mA)0.107
Vn at 1 kHz (typ) (nV√Hz)39
RatingCatalog
Operating temperature range (°C)-40 to 125
Offset drift (typ) (µV/°C)1.9
Input bias current (max) (pA)200
CMRR (typ) (dB)86
Iout (typ) (A)0.075
ArchitectureCMOS
Input common mode headroom (to negative supply) (typ) (V)0
Input common mode headroom (to positive supply) (typ) (V)-0.8
Output swing headroom (to negative supply) (typ) (V)0.007
Output swing headroom (to positive supply) (typ) (V)-0.007
SOIC (D)1451.9 mm² 8.65 x 6
TSSOP (PW)1432 mm² 5 x 6.4
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