这款 3.4mΩ,80V,SON 5mm x 6mm NexFET™功率 MOSFET 被设计成在功率转换应用中大大降低 损耗。
| VDS (V) | 80 |
| Configuration | Single |
| Rds(on) at VGS=10 V (max) (mΩ) | 4.1 |
| IDM - pulsed drain current (max) (A) | 400 |
| QG (typ) (nC) | 48 |
| QGD (typ) (nC) | 8.6 |
| QGS (typ) (nC) | 14 |
| VGS (V) | 20 |
| VGSTH typ (typ) (V) | 2.7 |
| ID - silicon limited at TC=25°C (A) | 157 |
| ID - package limited (A) | 100 |
| Logic level | No |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |
| VSON-CLIP (DNK) | 8 | 30 mm² 6 x 5 |