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TI(德州仪器) LMH6683
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  • TI(德州仪器) LMH6683
  • TI(德州仪器) LMH6683
  • TI(德州仪器) LMH6683
  • TI(德州仪器) LMH6683
  • TI(德州仪器) LMH6683
  • TI(德州仪器) LMH6683
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LMH6683

LMH6683

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三通道 190MHz 单电源运算放大器

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The LMH6682 and LMH6683 are high speed operational amplifiers designed for use in modern video systems. These single supply monolithic amplifiers extend TI's feature-rich, high value video portfolio to include a dual and a triple version. The important video specifications of differential gain (± 0.01% typ.) and differential phase (±0.08 degrees) combined with an output drive current in each amplifier of 85mA make the LMH6682 and LMH6683 excellent choices for a full range of video applications.

Voltage feedback topology in operational amplifiers assures maximum flexibility and ease of use in high speed amplifier designs. The LMH6682/83 is fabricated in TI's VIP10 process. This advanced process provides a superior ratio of speed to quiescient current consumption and assures the user of high-value amplifier designs. Advanced technology and circuit design enables in these amplifiers a −3db bandwidth of 190MHz, a slew rate of 940V/μsec, and stability for gains of less than −1 and greater than +2.

The input stage design of the LM6682/83 enables an input signal range that extends below the negative rail. The output stage voltage range reaches to within 0.8V of either rail when driving a 2kΩ load. Other attractive features include fast settling and low distortion. Other applications for these amplifiers include servo control designs. These applications are sensitive to amplifiers that exhibit phase reversal when the inputs exceed the rated voltage range. The LMH6682/83 amplifiers are designed to be immune to phase reversal when the specified input range is exceeded. See . This feature makes for design simplicity and flexibility in many industrial applications.

The LMH6682 dual operational amplifier is offered in miniature surface mount packages, SOIC-8, and VSSOP-8. The LMH6683 triple amplifier is offered in SOIC-14 and TSSOP-14.

    VS = ±5V, TA = 25°C, RL = 100Ω, A = +2 (Typical Values Unless Specified)

  • DG error 0.01%
  • DP error 0.08°
  • −3dB BW (A = +2) 190MHz
  • Slew rate (VS = ±5V) 940V/μs
  • Supply Current 6.5mA/amp
  • Output Current +80/−90mA
  • Input Common Mode Voltage 0.5V Beyond V,1.7V from V+
  • Output Voltage Swing (RL = 2kΩ) 0.8V from Rails
  • Input Voltage Noise (100KHz) 12nV/√Hz

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ArchitectureVoltage FB
Number of channels3
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)3
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)12
GBW (typ) (MHz)100
BW at Acl (MHz)190
Acl, min spec gain (V/V)2
Slew rate (typ) (V/µs)940
Vn at flatband (typ) (nV√Hz)12
Vn at 1 kHz (typ) (nV√Hz)12
Iq per channel (typ) (mA)6.5
Vos (offset voltage at 25°C) (max) (mV)5
Rail-to-railIn to V-
FeaturesDecompensated
RatingCatalog
Operating temperature range (°C)-40 to 85
CMRR (typ) (dB)82
Input bias current (max) (pA)20000000
Offset drift (typ) (µV/°C)2
Iout (typ) (mA)80
2nd harmonic (dBc)66
3rd harmonic (dBc)54
Frequency of harmonic distortion measurement (MHz)5
SOIC (D)1451.9 mm² 8.65 x 6
TSSOP (PW)1432 mm² 5 x 6.4
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