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TI(德州仪器) OPA657
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  • TI(德州仪器) OPA657
  • TI(德州仪器) OPA657
  • TI(德州仪器) OPA657
  • TI(德州仪器) OPA657
  • TI(德州仪器) OPA657
  • TI(德州仪器) OPA657
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OPA657

OPA657

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1.6GHz、低噪声、FET 输入运算放大器

产品详情
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  • 封装 | 引脚 | 尺寸

The OPA657 device combines a high-gain bandwidth, low-distortion, voltage-feedback operational amplifier with a low-voltage noise JFET-input stage to offer a very high dynamic range amplifier for high-precision ADC (analog-to-digital converter) driving or wideband transimpedance applications. Photodiode applications see improved noise and bandwidth using this decompensated, high-gain bandwidth amplifier.

Very low level signals can be significantly amplified in a single OPA657 gain stage with exceptional bandwidth and accuracy. Having a high 1.6-GHz gain bandwidth product gives greater than 10-MHz signal bandwidths up to gains of 160 V/V (44 dB). The very low input bias current and capacitance supports this performance even for relatively high source impedances.

Broadband photodetector applications benefit from the low-voltage noise JFET inputs for the OPA657. The JFET input contributes virtually no current noise while for broadband applications, a low voltage noise is also required. The low 4.8 nV/√Hz input voltage noise provides exceptional input sensitivity for higher bandwidth applications. The example shown below gives a total equivalent input noise current of 1.8 pA/√Hz over a 10-MHz bandwidth.

  • High Gain Bandwidth Product: 1.6 GHz
  • High Bandwidth 275 MHz (G = 10)
  • Slew Rate 700 V/µs (G = 10, 1-V Step)
  • Available in High Grade With Improved DC
    Specifications
  • Operating Temperature Range: –40°C to 85°C
  • Low-Input Offset Voltage: ±250 µV
  • Low-Input Bias Current: 2 pA
  • Low-Input Voltage Noise: 4.8 nV/√Hz
  • High-Output Current: 70 mA
  • Fast Overdrive Recovery
ArchitectureFET / CMOS Input, Voltage FB
Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)8
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)12
GBW (typ) (MHz)1600
BW at Acl (MHz)350
Acl, min spec gain (V/V)7
Slew rate (typ) (V/µs)700
Vn at flatband (typ) (nV√Hz)4.8
Vn at 1 kHz (typ) (nV√Hz)7
Iq per channel (typ) (mA)14
Vos (offset voltage at 25°C) (max) (mV)1.8
Rail-to-railNo
FeaturesDecompensated
RatingCatalog
Operating temperature range (°C)-40 to 85
CMRR (typ) (dB)89
Input bias current (max) (pA)20
Offset drift (typ) (µV/°C)2
Iout (typ) (mA)70
2nd harmonic (dBc)74
3rd harmonic (dBc)106
Frequency of harmonic distortion measurement (MHz)5
SOIC (D)829.4 mm² 4.9 x 6
SOT-23 (DBV)58.12 mm² 2.9 x 2.8
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