CSD17506Q5A系列介绍资料

您当前的位置：首页 > 电源管理 > MOSFET > N 沟道 MOSFET > CSD17506Q5A

CSD17506Q5A

正在供货

产品详情

The NexFET power MOSFET has been designed to minimize losses in power conversion applications.

Ultralow Q_g and Q_gd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
APPLICATIONS
- Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
- Synchronous or Control FET Applications

VDS (V)	30
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	5.3
Rds(on) at VGS=10 V (max) (mΩ)	4
IDM - pulsed drain current (max) (A)	150
QG (typ) (nC)	8.3
QGD (typ) (nC)	2.3
QGS (typ) (nC)	3.1
VGS (V)	20
VGSTH typ (typ) (V)	1.3
ID - silicon limited at TC=25°C (A)	100
ID - package limited (A)	100
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog

VSONP (DQJ)

29.4 mm² 4.9 x 6

产品购买

温馨提示：

订单商品问题请移至我的售后服务提交售后申请，其他需投诉问题可移至我的投诉提交，我们将在第一时间给您答复