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TI(德州仪器) CSD86330Q3D
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  • TI(德州仪器) CSD86330Q3D
  • TI(德州仪器) CSD86330Q3D
  • TI(德州仪器) CSD86330Q3D
  • TI(德州仪器) CSD86330Q3D
  • TI(德州仪器) CSD86330Q3D
  • TI(德州仪器) CSD86330Q3D
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CSD86330Q3D

CSD86330Q3D

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采用 3mm x 3mm SON 封装的 20A、25V、N 沟道同步降压 NexFET™ 功率 MOSFET 电源块

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The CSD86330Q3D NexFET™ power block is an optimized design for synchronous buck applications offering high current, high efficiency, and high frequency capability in a small 3.3 mm × 3.3 mm outline. Optimized for 5 V gate drive applications, this product offers a flexible solution capable of offering a high density power supply when paired with any 5 V gate drive from an external controller/driver.

  • Half-Bridge Power Block
  • 90% System Efficiency at 15 A
  • Up to 20 A Operation
  • High Frequency Operation (Up To 1.5 MHz)
  • High Density – SON 3.3 mm × 3.3 mm Footprint
  • Optimized for 5 V Gate Drive
  • Low Switching Losses
  • Ultra Low Inductance Package
  • RoHS Compliant
  • Halogen Free
  • Pb-Free Terminal Plating
  • APPLICATIONS
    • Synchronous Buck Converters
      • High Frequency Applications
      • High Current, Low Duty Cycle Applications
    • Multiphase Synchronous Buck Converters
    • POL DC-DC Converters
    • IMVP, VRM, and VRD Applications

VGS (V)10
VDS (V)25
Power loss (W)1.9
Ploss current (A)15
ID - continuous drain current at TA=25°C (A)20
Operating temperature range (°C)-55 to 150
FeaturesPower supply
Duty cycle (%)Low
RatingCatalog
LSON-CLIP (DQZ)810.89 mm² 3.3 x 3.3
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