CSD17507Q5A系列介绍资料

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CSD17507Q5A

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This 30-V, 9-mΩ, SON 5-mm × 6-mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Ultra-Low Q_g and Q_gd
Low-Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package
APPLICATIONS
- Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems
- Optimized for Control FET Applications

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VDS (V)	30
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	16.1
Rds(on) at VGS=10 V (max) (mΩ)	10.8
IDM - pulsed drain current (max) (A)	85
QG (typ) (nC)	2.8
QGD (typ) (nC)	0.7
QGS (typ) (nC)	1.3
VGS (V)	20
VGSTH typ (typ) (V)	1.6
ID - silicon limited at TC=25°C (A)	65
ID - package limited (A)	65
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog

VSONP (DQJ)

29.4 mm² 4.9 x 6

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