The device has been designed to deliver the lowest on resistance and gate charge in the smallest outline possible with thermal characteristics in an ultra low profile. Low on resistance and gate charge coupled with the small footprint and low profile make the device ideal for battery operated space constrained application in load management as well as DC-DC converter applications
| VDS (V) | 25 |
| Configuration | Dual Common Source |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 42 |
| IDM - pulsed drain current (max) (A) | 4.5 |
| QG (typ) (nC) | 3.1 |
| QGD (typ) (nC) | 0.33 |
| QGS (typ) (nC) | 0.85 |
| VGS (V) | 10 |
| VGSTH typ (typ) (V) | 1 |
| ID - silicon limited at TC=25°C (A) | 4.5 |
| ID - package limited (A) | 4.5 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |
| DSBGA (YZG) | 12 | 3.9375 mm² 2.25 x 1.75 |
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