This 30-V, 24-mΩ, 2-mm × 2-mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications. The 2-mm × 2-mm SON offers excellent thermal performance for the size of the package.
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| VDS (V) | 30 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 32 |
| IDM - pulsed drain current (max) (A) | 20 |
| QG (typ) (nC) | 2.1 |
| QGD (typ) (nC) | 0.4 |
| QGS (typ) (nC) | 0.7 |
| VGS (V) | 10 |
| VGSTH typ (typ) (V) | 1.3 |
| ID - silicon limited at TC=25°C (A) | 19 |
| ID - package limited (A) | 5 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |
| WSON (DQK) | 6 | 4 mm² 2 x 2 |
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