CSD16409Q3系列介绍资料

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CSD16409Q3

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The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.

Ultra Low Q_g and Q_gd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 3.3mm x 3.3mm Plastic Package
APPLICATIONS
- Point-of-Load Synchronous Buck Converter for Applications
  in Networking, Telecom and Computing Systems
- Optimized for Control FET Applications

NexFET is a trademark of Texas Instruments.

VDS (V)	25
Configuration	Single
Rds(on) at VGS=4.5 V (max) (mΩ)	12.4
Rds(on) at VGS=10 V (max) (mΩ)	8.2
IDM - pulsed drain current (max) (A)	90
QG (typ) (nC)	4
QGD (typ) (nC)	1
QGS (typ) (nC)	2.1
VGS (V)	16
VGSTH typ (typ) (V)	2
ID - silicon limited at TC=25°C (A)	60
ID - package limited (A)	60
Logic level	Yes
Operating temperature range (°C)	-55 to 150
Rating	Catalog

VSON-CLIP (DQG)

10.89 mm² 3.3 x 3.3

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