The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
NexFET is a trademark of Texas Instruments.
| VDS (V) | 25 |
| Configuration | Single |
| Rds(on) at VGS=4.5 V (max) (mΩ) | 12 |
| Rds(on) at VGS=10 V (max) (mΩ) | 8.5 |
| IDM - pulsed drain current (max) (A) | 158 |
| QG (typ) (nC) | 3.9 |
| QGD (typ) (nC) | 1.1 |
| QGS (typ) (nC) | 1.8 |
| VGS (V) | 16 |
| VGSTH typ (typ) (V) | 1.9 |
| ID - silicon limited at TC=25°C (A) | 59 |
| ID - package limited (A) | 59 |
| Logic level | Yes |
| Operating temperature range (°C) | -55 to 150 |
| Rating | Catalog |
| VSONP (DQJ) | 8 | 29.4 mm² 4.9 x 6 |