h1_key

TI(德州仪器) TPS22922
德州仪器 (TI) 全系列产品在线购买
  • TI(德州仪器) TPS22922
  • TI(德州仪器) TPS22922
  • TI(德州仪器) TPS22922
  • TI(德州仪器) TPS22922
  • TI(德州仪器) TPS22922
  • TI(德州仪器) TPS22922
立即查看
您当前的位置: 首页 > 电源管理 > 电源开关 > 负载开关 > TPS22922
TPS22922

TPS22922

正在供货

具有输出放电功能的 3.6V、2A、14mΩ、35nA 泄漏负载开关

产品详情
  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

TPS22921, TPS22922, and TPS22922B are small, low rON load switches with controlled turnon. The TPS22921/2/2B contains a P-channel MOSFET that can operate over an input voltage range of 0.9 V to 3.6 V. The switch is controlled by an on/off input (ON), which can interface directly with low-voltage control signals. In TPS22922 and in TPS22922B, a 65-Ω on-chip load resistor is added for output quick discharge when the switch is turned off. The rise time (slew rate) of the device is internally controlled in order to avoid inrush current: TPS22921 and TPS22922 feature a 30-µs rise time, whereas TPS22922B is 200 µs.

TPS22921, TPS22922, and TPS22922B feature low quiescent and shutdown currents and are available in space-saving 6-pin wafer-chip-scale packages DSBGA (WCSP: YZP and YZT with 0.5-mm pitch and YFP with 0.4-mm pitch) which make them ideal for portable electronics. The devices are characterized for operation over the free-air temperature range of –40°C to 85°C.

  • Integrated P-Channel Load Switch
  • Input Voltage: 0.9 V to 3.6 V
  • ON-Resistance (Typical Values)
    • rON = 14 mΩ at VIN = 3.6 V
    • rON = 20 mΩ at VIN = 2.5 V
    • rON = 33 mΩ at VIN = 1.8 V
    • rON = 67 mΩ at VIN = 1.2 V
    • rON = 116 mΩ at VIN = 1.0 V
  • 2-A Maximum Continuous Switch Current
  • Quiescent Current:
    • Typical 78 nA at 1.8 V
  • Shutdown Current:
    • Typical 35 nA at 1.8 V
  • Low Threshold Control Input Enable the use of
    1.2 V, 1.8 V, 2.5 V, or 3.3 V Logic
  • Controlled Slew Rate to Avoid Inrush Currents
    • tR = 30 µs at VIN = 1.8 V
      (TPS22921/2)
    • tR = 200 µs at VIN = 1.8 V
      (TPS22922B)
  • Quick Output Discharge (TPS22922/2B)
  • ESD Performance Tested Per JESD 22
    • 3000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Six Terminal Wafer-Chip-Scale DSBGA Package
    (nominal dimensions shown - see Mechanical,
    Packaging, and Orderable Information
    for details)
    • 0.9-mm × 1.4-mm, 0.5-mm Pitch,
      0.5 mm Height (YZP)
    • 0.9-mm × 1.4-mm, 0.5-mm Pitch,
      0.625 mm Height (YZT)
    • 0.8-mm × 1.2-mm, 0.4-mm Pitch,
      0.5-mm Height (YFP)
Number of channels1
Vin (min) (V)0.9
Vin (max) (V)3.6
Imax (A)2
Ron (typ) (mΩ)16
Shutdown current (ISD) (typ) (µA)0.13
Quiescent current (Iq) (typ) (µA)0.2
Soft startFixed Rise Time
Current limit typeNone
FeaturesQuick output discharge
RatingCatalog
Operating temperature range (°C)-40 to 85
FETInternal
Device typeLoad switches
FunctionInrush current control
DSBGA (YFP)61.4000000000000001 mm² 1 x 1.4000000000000001
DSBGA (YZP)62.1875 mm² 1.75 x 1.25
产品购买
  • 商品型号
  • 封装
  • 工作温度
  • 包装
  • 价格
  • 现货库存
  • 操作
10s
温馨提示:
订单商品问题请移至我的售后服务提交售后申请,其他需投诉问题可移至我的投诉提交,我们将在第一时间给您答复
返回顶部