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TI(德州仪器) TLV2760
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  • TI(德州仪器) TLV2760
  • TI(德州仪器) TLV2760
  • TI(德州仪器) TLV2760
  • TI(德州仪器) TLV2760
  • TI(德州仪器) TLV2760
  • TI(德州仪器) TLV2760
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TLV2760

TLV2760

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具有关断功能的单通道、3.6V、500kHz、RRIO 运算放大器

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The TLV276x single supply operational amplifiers provide 500 kHz bandwidth from only 20 µA while operating down to 1.8 V over the industrial temperature range. The maximum recommended supply voltage is 3.6 V, which allows the devices to be operated from (.1.8 V supplies down to .0.9 V) two AA or AAA cells. The devices have been characterized at 1.8 V (end of life of 2 AA(A) cells) and at 2.4 V (nominal voltage of 2 NiCd/NiMH cells). The TLV276x have rail-to-rail input and output capability which is a necessity at 1.8 V.

The low supply current is coupled with extremely low input bias currents enabling them to be used with mega-ohm resistors. Low shutdown current of only 10 nA make these devices ideal for low frequency measurement applications desiring long active battery life.

All members are available in PDIP and SOIC with the singles in the small SOT-23 package, duals in the MSOP, and quads in the TSSOP package.

  • Low Supply Voltage … 1.8 V to 3.6 V
  • Very Low Supply Current … 20 µA
    (per channel)
  • Ultralow Power Shut-Down Mode
    • IDD(SHDN) = 10 nA/Channel
  • CMOS Rail-to-Rail Input/Output
  • Input Common-Mode Voltage Range …
    0.2 V to VDD + 0.2 V
  • Input Offset Voltage … 550 µV
  • Wide Bandwidth … 500 kHz
  • Slew Rate … 0.20 V/µs
  • Specified Temperature Range:
    0°C to 70°C … Commercial Grade
    –40°C to 85°C … Industrial Grade
  • Ultrasmall Packaging
    5 or 6 Pin SOT-23 (TLV2760/1)
    8 or 10 Pin MSOP (TLV2762/3)
  • Universal Op-Amp EVM

Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)3.6
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)1.8
Rail-to-railIn, Out
GBW (typ) (MHz)0.5
Slew rate (typ) (V/µs)0.22
Vos (offset voltage at 25°C) (max) (mV)3.5
Iq per channel (typ) (mA)0.02
Vn at 1 kHz (typ) (nV√Hz)95
RatingCatalog
Operating temperature range (°C)-40 to 85
Offset drift (typ) (µV/°C)9
FeaturesShutdown
Input bias current (max) (pA)15
CMRR (typ) (dB)76
Iout (typ) (A)0.007
ArchitectureCMOS
Input common mode headroom (to negative supply) (typ) (V)-0.2
Input common mode headroom (to positive supply) (typ) (V)0.2
Output swing headroom (to negative supply) (typ) (V)0.05
Output swing headroom (to positive supply) (typ) (V)-0.01
PDIP (P)892.5083 mm² 9.81 x 9.43
SOIC (D)829.4 mm² 4.9 x 6
SOT-23 (DBV)68.12 mm² 2.9 x 2.8
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