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TI(德州仪器) INA166
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  • TI(德州仪器) INA166
  • TI(德州仪器) INA166
  • TI(德州仪器) INA166
  • TI(德州仪器) INA166
  • TI(德州仪器) INA166
  • TI(德州仪器) INA166
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INA166

INA166

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低噪音低失真 G=2000 仪表放大器

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The INA166 is a very low-noise, low-distortion, monolithic instrumentation amplifier. Its current-feedback circuitry achieves very wide bandwidth and excellent dynamic response over a wide range of gain. It is ideal for low-level signals such as microphones or hydrophones. Many industrial, instrumentation, and medical applications also benefit from its low noise and wide bandwidth.

Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain. The INA166 provides near-theoretical noise performance for 200 source impedance. Its differential input, low noise, and low distortion provide superior performance as a low-level signal amplifier.

The INA166 is available in a space-saving SO-14 surface-mount package, specified for operation over the x9640°C to +85°C temperature range.

  • LOW NOISE: 1.3nV/Hz at 1kHz
  • LOW THD+N: 0.09% at 1kHz
  • WIDE BANDWIDTH: 450kHz
  • WIDE SUPPLY RANGE: ±4.5V to ±18V
  • HIGH CMR: > 100dB
  • GAIN SET WITH EXTERNAL RESISTOR
  • SO-14 SURFACE-MOUNT PACKAGE
  • APPLICATIONS
    • MOVING-COIL TRANSDUCER AMPLIFIERS
    • DIFFERENTIAL RECEIVERS
    • BRIDGE TRANSDUCER AMPLIFIERS
    • MICROPHONE AND HYDROPHONE
    • PREAMPS
Number of channels1
Vs (max) (V)36
Vs (min) (V)9
Input offset (±) (max) (µV)250
Voltage gain (min) (V/V)2000
Voltage gain (max) (V/V)2000
Noise at 1 kHz (typ) (nV√Hz)1.3
FeaturesUltra-low noise
CMRR (min) (dB)100
Input bias current (±) (max) (nA)12000
Iq (typ) (mA)10
Bandwidth at min gain (typ) (MHz)0.45
Gain error (±) (max) (%)1
Operating temperature range (°C)-55 to 125
RatingCatalog
TypeFixed Gain
Gain nonlinearity (±) (max) (%)0.005
Output swing headroom (to negative supply) (typ) (V)1.8
Output swing headroom (to positive supply) (typ) (V)-1.8
Input common mode headroom (to negative supply) (typ) (V)3
Input common mode headroom (to positive supply) (typ) (V)-3
SOIC (D)1451.9 mm² 8.65 x 6
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