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TI(德州仪器) OPA452
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  • TI(德州仪器) OPA452
  • TI(德州仪器) OPA452
  • TI(德州仪器) OPA452
  • TI(德州仪器) OPA452
  • TI(德州仪器) OPA452
  • TI(德州仪器) OPA452
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OPA452

OPA452

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带宽为 1.8MHz、单位增益稳定的 80V、50mA 运算放大器

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The OPA452 and OPA453 are low-cost operational amplifiers with high-voltage (80V) and high-current capabilities (50mA). The OPA452 is unity-gain stable and has a gain bandwidth product of 1.8MHz, whereas the OPA453 is optimized for gains greater than 5 and has a 7.5MHz bandwidth.

The OPA452 and OPA453 are internally protected against over-temperature conditions and current overloads. Power supplies in the range of ±10V to ±40V can be used. Unlike most other power op amps, the OPA452 and OPA453 have ensured specifications over the entire power-supply range.

These laser-trimmed, monolithic integrated circuits provide excellent low-level accuracy along with wide output swing. Special design considerations assure that the product is easy to use and free from phase inversion problems often found in other amplifiers.

The OPA452 and OPA453 are available in TO220-7 and DDPAK-7 options. They are specified for a junction temperature range of –40°C to +125°C.

  • WIDE POWER-SUPPLY RANGE:
       ±10V to ±40V
  • HIGH OUTPUT LOAD DRIVE:
       50mA Continuous
  • WIDE OUTPUT VOLTAGE SWING: 1V to Rail
  • FULLY PROTECTED:
       Thermal Shutdown
       Output Current-Limited
  • WIDE OPERATING TEMPERATURE RANGE:
       –40°C TO +125°C
  • PACKAGE OPTIONS:
       TO220-7
       DDPACK-7 Surface-Mount
  • APPLICATIONS
    • PIEZOELECTRIC CELLS
    • TEST EQUIPMENT
    • AUDIO AMPLIFIERS
    • TRANSDUCER DRIVERS
    • SERVO DRIVERS

Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)20
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)80
Iout (typ) (A)0.05
GBW (typ) (MHz)1.8
Slew rate (typ) (V/µs)7.2
Vos (offset voltage at 25°C) (max) (mV)3
Offset drift (typ) (V/°C)0.000005
Iq per channel (typ) (mA)5.5
RatingCatalog
Operating temperature range (°C)-40 to 125
Input bias current (max) (pA)100
CMRR (typ) (dB)94
Rail-to-railNo
ArchitectureFET
TO-263 (KTW)7153.924 mm² 10.1 x 15.24
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