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TI(德州仪器) LM7372
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  • TI(德州仪器) LM7372
  • TI(德州仪器) LM7372
  • TI(德州仪器) LM7372
  • TI(德州仪器) LM7372
  • TI(德州仪器) LM7372
  • TI(德州仪器) LM7372
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LM7372

LM7372

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高速、高输出电流、双通道运算放大器

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The LM7372 is a high speed dual voltage feedback amplifier with the slewing characteristic of current feedback amplifiers. However, it can be used in all traditional voltage feedback amplifier configurations.

The LM7372 is stable for gains as low as +2 or −1. It provides a very high slew rate at 3000 V/µs and a wide gain bandwidth product of 120 MHz, while consuming only 6.5 mA/per amplifier of supply current. It is ideal for video and high speed signal processing applications such as xDSL and pulse amplifiers. With 150 mA output current, the LM7372 can be used for video distribution, as a transformer driver or as a laser diode driver.

Operation on ±15 V power supplies allows for large signal swings and provides greater dynamic range and signal-to-noise ratio. The LM7372 offers high SFDR and low THD, ideal for ADC/DAC systems. In addition, the LM7372 is specified for ±5 V operation for portable applications.

The LM7372 is built on TI's Advance VIP III (Vertically integrated PNP) complementary bipolar process.

  • −80 dBc Highest Harmonic Distortion @1 MHz,
    2VPP
  • Very High Slew Rate: 3000 V/µs
  • Wide Gain Bandwidth Product: 120 MHz
  • −3 dB Frequency @ AV = +2: 200 MHz
  • Low Supply Current: 13 mA (both amplifiers)
  • High Open Loop Gain: 85 dB
  • High Output Current: 150 mA
  • Differential Gain and Phase: 0.01%, 0.02°
ArchitectureVoltage FB
Number of channels2
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)9
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)36
GBW (typ) (MHz)120
BW at Acl (MHz)60
Acl, min spec gain (V/V)2
Slew rate (typ) (V/µs)3000
Vn at flatband (typ) (nV√Hz)14
Vn at 1 kHz (typ) (nV√Hz)14
Iq per channel (typ) (mA)6.5
Vos (offset voltage at 25°C) (max) (mV)8
Rail-to-railNo
FeaturesDecompensated
RatingCatalog
Operating temperature range (°C)-40 to 85
CMRR (typ) (dB)93
Input bias current (max) (pA)10000000
Offset drift (typ) (µV/°C)12
Iout (typ) (mA)150
2nd harmonic (dBc)80
3rd harmonic (dBc)91
Frequency of harmonic distortion measurement (MHz)1
HSOIC (DDA)829.4 mm² 4.9 x 6
SOIC (D)1659.4 mm² 9.9 x 6
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