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TI(德州仪器) THS4081
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  • TI(德州仪器) THS4081
  • TI(德州仪器) THS4081
  • TI(德州仪器) THS4081
  • TI(德州仪器) THS4081
  • TI(德州仪器) THS4081
  • TI(德州仪器) THS4081
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THS4081

THS4081

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175MHz 低功耗电压反馈放大器

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  • 封装 | 引脚 | 尺寸

The THS4081 and THS4082 are ultralow-power, high-speed voltage feedback amplifiers that are ideal for communication and video applications. These amplifiers operate off of a very low 3.4-mA quiescent current per channel and have a high output drive capability of 85 mA. The signal-amplifier THS4081 and the dual-amplifier THS4082 offer very good ac performance with 175-MHz bandwidth, 230-V/us slew rate, and 43-ns settling time (0.1%). With total harmonic distortion (THD) of x9664 dBc at f = 1 MHz, the THS4081 and THS4082 are ideally suited for applications requiring low distortion.

  • Ultralow 3.4 mA Per Channel Quiescent Current
  • High Speed
    • 175 MHz Bandwidth (x963 dB, G = 1)
    • 230 V/us Slew Rate
    • 43 ns Settling Time (0.1%)
  • High Output Drive, IO = 85 mA (typ)
  • Excellent Video Performance
    • 35 MHz Bandwidth (0.1 dB, G = 1)
    • 0.01% Differential Gain
    • 0.05° Differential Phase
  • Very Low Distortion
    • THD = x9664 dBc (f = 1 MHz, RL = 150 )
    • THD = x9679 dBc (f = 1 MHz, RL = 1 k)
  • Wide Range of Power Supplies
    • VCC = ±5 V to ±15 V
  • Available in Standard SOIC or MSOP PowerPAD™ Package
  • Evaluation Module Available

PowerPAD is a trademark of Texas Instruments.

ArchitectureVoltage FB
Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)10
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)30
GBW (typ) (MHz)95
BW at Acl (MHz)175
Acl, min spec gain (V/V)1
Slew rate (typ) (V/µs)230
Vn at flatband (typ) (nV√Hz)10.2
Vn at 1 kHz (typ) (nV√Hz)10
Iq per channel (typ) (mA)3.4
Vos (offset voltage at 25°C) (max) (mV)7
Rail-to-railNo
RatingCatalog
Operating temperature range (°C)-40 to 85
CMRR (typ) (dB)90
Input bias current (max) (pA)6000000
Offset drift (typ) (µV/°C)15
Iout (typ) (mA)85
2nd harmonic (dBc)79
3rd harmonic (dBc)79
Frequency of harmonic distortion measurement (MHz)1
HVSSOP (DGN)814.7 mm² 3 x 4.9
SOIC (D)829.4 mm² 4.9 x 6
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