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TI(德州仪器) TPIC6B596
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  • TI(德州仪器) TPIC6B596
  • TI(德州仪器) TPIC6B596
  • TI(德州仪器) TPIC6B596
  • TI(德州仪器) TPIC6B596
  • TI(德州仪器) TPIC6B596
  • TI(德州仪器) TPIC6B596
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TPIC6B596

TPIC6B596

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用于增强级联的 8 位移位寄存器

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  • 特性
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  • 封装 | 引脚 | 尺寸

The TPIC6B596 is a monolithic, high-voltage, medium-current power 8-bit shift register designed for use in systems that require relatively high load power. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other medium-current or high-voltage loads.

This device contains an 8-bit serial-in, parallel-out shift register that feeds an 8-bit D-type storage register. Data transfers through both the shift and storage registers on the rising edge of the shift-register clock (SRCK) and the register clock (RCK), respectively. The storage register transfers data to the output buffer when shift-register clear (SRCLR) is high. When SRCLR is low, all registers in the device are cleared. When output enable (G) is held high, all data in the output buffers is held low and all drain outputs are off. When G is held low, data from the storage register is transparent to the output buffers. When data in the output buffers is low, the DMOS-transistor outputs are off. When data is high, the DMOS-transistor outputs have sink-current capability. The serial output (SER OUT) is clocked out of the device on the falling edge of SRCK to provide additional hold time for cascaded applications. This will provide improved performance for applications where clock signals may be skewed, devices are not located near one another, or the system must tolerate electromagnetic interference.

Outputs are low-side, open-drain DMOS transistors with output ratings of 50 V and 150-mA continuous sinkcurrent capability. Each output provides a 500-mA typical current limit at TC = 25°C. The current limit decreases as the junction temperature increases for additional device protection.

The TPIC6B596 is characterized for operation over the operating case temperature range of -40°C to 125°C.

  • Low rDS(on) . . . 5
  • Avalanche Energy . . . 30 mJ
  • Eight Power DMOS-Transistor Outputs of 150-mA Continuous Current
  • 500-mA Typical Current-Limiting Capability
  • Output Clamp Voltage . . . 50 V
  • Enhanced Cascading for Multiple Stages
  • All Registers Cleared With Single Input
  • Low Power Consumption

Number of channels8
TopologyOpen drain
RatingAutomotive
Operating temperature range (°C)-40 to 125
Vin (min) (V)4.5
Vin (max) (V)5.5
Vout (max) (V)50
FeaturesEnable/Shutdown, Thermal shutdown
PDIP (N)20228.702 mm² 24.33 x 9.4
SOIC (DW)20131.84 mm² 12.8 x 10.3
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