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TI(德州仪器) BQ2204A
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  • TI(德州仪器) BQ2204A
  • TI(德州仪器) BQ2204A
  • TI(德州仪器) BQ2204A
  • TI(德州仪器) BQ2204A
  • TI(德州仪器) BQ2204A
  • TI(德州仪器) BQ2204A
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BQ2204A

BQ2204A

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用于 4 SRAM 内存组的 SRAM 非易失性控制器 IC

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The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory.

A precision comparator monitors the 5V VCC input for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM.

During a power failure, the external SRAMs are switched from the VCC supply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists.

During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM.

  • Power monitoring and switching for 3-volt battery-backup applications
  • Write-protect control
  • 2-input decoder for control of up to 4 banks of SRAM
  • 3-volt primary cell inputs
  • Less than 10ns chip-enable propagation delay
  • 5% or 10% supply operation
Vin (max) (V)5.5
Features4-Bank SRAM, CMOS, Non-volatile controller, Write-protection
Device typeMemory device
Operating temperature range (°C)-40 to 85
RatingCatalog
Communication interfaceNo interface
Operating current (typ) (µA)3000
PDIP (N)16181.42 mm² 19.3 x 9.4
SOIC (D)1659.4 mm² 9.9 x 6
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