The CMOS bq2204A SRAM Non-volatile Controller Unit provides all necessary functions for converting up to four banks of standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCC input for an out-of-tolerance condi-tion. When out-of-tolerance is detected, the four conditioned chip-enable outputs are forced inactive to write-protect up to four banks of SRAM.
During a power failure, the external SRAMs are switched from the VCC supply to one of two 3V backup sup-plies. On a subsequent power-up, the SRAMs are write-protected until a power-valid condition exists.
During power-valid operation, a two-input decoder transparently selects one of up to four banks of SRAM.
| Vin (max) (V) | 5.5 |
| Features | 4-Bank SRAM, CMOS, Non-volatile controller, Write-protection |
| Device type | Memory device |
| Operating temperature range (°C) | -40 to 85 |
| Rating | Catalog |
| Communication interface | No interface |
| Operating current (typ) (µA) | 3000 |
| PDIP (N) | 16 | 181.42 mm² 19.3 x 9.4 |
| SOIC (D) | 16 | 59.4 mm² 9.9 x 6 |