The CMOS bq2201 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory.
A precision comparator monitors the 5V VCC input for an out-of-tolerance condition. When out of tolerance is detected, a conditioned chip-enable output is forced inactive to write-protect any standard CMOS SRAM.
During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup supplies. On a subsequent power-up, the SRAM is write-protected until a power-valid condition exists.
The bq2201 is footprint- and timing-compatible with industry standards with the added benefit of a chip-enable propagation delay of less than 10ns.
| Vin (max) (V) | 5.5 |
| Features | 1-Bank SRAM, CMOS, Non-volatile controller, Write-protection |
| Device type | Memory device |
| Operating temperature range (°C) | -40 to 85 |
| Rating | Catalog |
| Communication interface | No interface |
| Operating current (typ) (µA) | 3000 |
| SOIC (D) | 8 | 29.4 mm² 4.9 x 6 |