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TI(德州仪器) OPA551
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  • TI(德州仪器) OPA551
  • TI(德州仪器) OPA551
  • TI(德州仪器) OPA551
  • TI(德州仪器) OPA551
  • TI(德州仪器) OPA551
  • TI(德州仪器) OPA551
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OPA551

OPA551

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高电流(380mA 典型值)、高电压 (60V) 运算放大器

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  • 封装 | 引脚 | 尺寸

The OPA551x devices are low-cost operational amplifiers with high-voltage (60-V) and high-current (200-mA) capability.

The OPA551 is unity-gain stable and features high slew rate (15 V/µs) and wide bandwidth (3 MHz). The OPA552 is optimized for gains of 5 or greater, and offers higher speed with a slew rate of 24 V/µs and a bandwidth of 12 MHz. Both devices are suitable for telephony, audio, servo, and test applications.

These laser-trimmed, monolithic integrated circuits provide excellent low-level accuracy along with high output swing. High performance is maintained as the amplifier swings to its specified limits.

The OPA55x devices are internally protected against overtemperature conditions and current overloads. The thermal shutdown indicator flag provides a current output to alert the user when thermal shutdown has occurred.

The OPA55x devices are available in PDIP-8 and SOIC-8 packages, as well as a DDPAK-7/TO-263 surface-mount plastic power package. They are specified for operation over the extended industrial temperature range, –40°C to +125°C.

  • Wide Supply Range: ±4 V to ±30 V
  • High Output Current: 200 mA Continuous
  • Low Noise: 14 nV/√Hz
  • Fully Protected:
    • Thermal Shutdown
    • Output Current-Limited
  • Thermal Shutdown Indicator
  • Wide Output Swing: 2 V from Rail
  • Fast Slew Rate:
    • OPA551: 15 V/µs
    • OPA552: 24 V/µs
  • Wide Bandwidth:
    • OPA551: 3 MHz
    • OPA552: 12 MHz
  • Packages: PDIP-8, SOIC-8, or
    DDPAK/TO-263-7
Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)8
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)60
Iout (typ) (A)0.38
GBW (typ) (MHz)3
Slew rate (typ) (V/µs)15
Vos (offset voltage at 25°C) (max) (mV)3
Offset drift (typ) (V/°C)0.000007
Iq per channel (typ) (mA)7
RatingCatalog
Operating temperature range (°C)-40 to 125
Input bias current (max) (pA)100
CMRR (typ) (dB)102
Rail-to-railNo
ArchitectureFET
PDIP (P)892.5083 mm² 9.81 x 9.43
SOIC (D)829.4 mm² 4.9 x 6
TO-263 (KTW)7153.924 mm² 10.1 x 15.24
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