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TI(德州仪器) SN74CB3Q3244
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  • TI(德州仪器) SN74CB3Q3244
  • TI(德州仪器) SN74CB3Q3244
  • TI(德州仪器) SN74CB3Q3244
  • TI(德州仪器) SN74CB3Q3244
  • TI(德州仪器) SN74CB3Q3244
  • TI(德州仪器) SN74CB3Q3244
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SN74CB3Q3244

SN74CB3Q3244

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具有 2 个控制输入的 3.3V、1:1 (SPST)、8 通道 FET 高带宽总线开关

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The SN74CB3Q3244 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3244 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The SN74CB3Q3244 is organized as two 4-bit bus switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 4-bit bus switches or as one 8-bit bus switch. When OE is low, the associated 4-bit bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 4-bit bus switch is OFF, and the high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

  • High-Bandwidth Data Path (Up To 500 MHz)
  • 5-V-Tolerant I/Os with Device Powered-Up or Powered-Down
  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 4 Typical)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0- to 5-V Switching With 3.3-V VCC
    • 0- to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow, With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 3.5 pF Typical)
  • Fast Switching Frequency (fOE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot Clamp Diodes
  • Low Power Consumption (ICC = 0.7 mA Typical)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0 to 5-V Signaling Levels (0.8-V, 1.2-V, 1.5-V, 1.8-V, 2.5-V, 3.3-V, 5-V)
  • Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications: Differential Signal Interface, Memory Interleaving, Bus Isolation, Low-Distortion Signal Gating

For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.

Configuration1
Number of channels8
Power supply voltage - single (V)2.5, 3.3
ProtocolsAnalog
Ron (typ) (Ω)4
CON (typ) (pF)9
Supply current (typ) (µA)1000
Bandwidth (MHz)500
Operating temperature range (°C)-40 to 85
FeaturesPowered-off protection, Supports input voltage beyond supply
Input/output continuous current (max) (mA)64
RatingCatalog
Drain supply voltage (max) (V)3.6
Supply voltage (max) (V)3.6
SSOP (DBQ)2051.9 mm² 8.65 x 6
TSSOP (PW)2041.6 mm² 6.5 x 6.4
TVSOP (DGV)2032 mm² 5 x 6.4
VQFN (RGY)2015.75 mm² 4.5 x 3.5
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