SN74CB3T1G125系列介绍资料

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SN74CB3T1G125

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具有电平转换器的 3.3V、1:1 (SPST)、单通道 FET 总线开关

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The SN74CB3T1G125 is a high-speed TTL-compatible FET bus switch with low ON-state resistance (r_on), allowing for minimal propagation delay. The device fully supports mixed-mode signal operation on all data I/O ports by providing voltage translation that tracks V_CC. The SN74CB3T1G125 supports systems using 5-V TTL, 3.3-V LVTTL, and 2.5-V CMOS switching standards, as well as user-defined switching levels.

The SN74CB3T1G125 is a 1-bit bus switch with a single ouput-enable (OE) input. When OE is low, the bus switch is ON, and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the bus switch is OFF, and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using I_off. The I_off feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to V_CC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

Output Voltage Translation Tracks V_CC
Supports Mixed-Mode Signal Operation on All Data I/O Ports
- 5-V Input Down to 3.3-V Output Level Shift With 3.3-V V_CC
- 5-V/3.3-V Input Down to 2.5-V Output Level Shift With 2.5-V V_CC
5-V-Tolerant I/Os, With Device Powered Up or Powered Down
Bidirectional Data Flow With Near-Zero Propagation Delay
Low ON-State Resistance (r_on) Characteristics (r_on= 5 Typ)
Low Input/Output Capacitance Minimizes Loading (C_io(OFF) = 5 pF Typ)
Data and Control Inputs Provide Undershoot Clamp Diodes
Low Power Consumption (I_CC = 20 µA Max)
V_CC Operating Range From 2.3 V to 3.6 V
Data I/Os Support 0- to 5-V Signaling Levels (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
I_off Supports Partial-Power-Down Mode Operation
Latch-Up Performance Exceeds 250 mA Per JESD 17
ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
Supports Digital Applications: Level Translation, USB Interface, Bus Isolation
Ideal for Low-Power Portable Equipment

Configuration	1
Number of channels	1
Power supply voltage - single (V)	2.5, 3.3
Protocols	Analog
Ron (typ) (Ω)	5
CON (typ) (pF)	12
ON-state leakage current (max) (µA)	20
Operating temperature range (°C)	-40 to 85
Features	Powered-off protection, Signal path translation
Input/output continuous current (max) (mA)	128
Rating	Catalog
Drain supply voltage (max) (V)	3.6
Supply voltage (max) (V)	3.6

SOT-23 (DBV)	5	8.12 mm² 2.9 x 2.8
SOT-SC70 (DCK)	5	4.2 mm² 2 x 2.1

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SN74CB3T1G125

具有电平转换器的 3.3V、1:1 (SPST)、单通道 FET 总线开关

4000-306-326