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TI(德州仪器) SN74CBTLV3857
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  • TI(德州仪器) SN74CBTLV3857
  • TI(德州仪器) SN74CBTLV3857
  • TI(德州仪器) SN74CBTLV3857
  • TI(德州仪器) SN74CBTLV3857
  • TI(德州仪器) SN74CBTLV3857
  • TI(德州仪器) SN74CBTLV3857
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SN74CBTLV3857

SN74CBTLV3857

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具有内部下拉电阻的 3.3V、1:1 (SPST)、10 通道 FET 总线开关

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  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

This 10-bit FET bus switch is designed for 3-V to 3.6-V VCC operation and SSTL_2 output-enable (OE) input levels.

When OE is low, the 10-bit bus switch is on, and port A is connected to port B. When OE is high, the switch is open, and the high-impedance state exists between the two ports. There are 10-k pulldown resistors to ground on the B port.

The FET switch on-state resistance is designed to replace the series terminating resistor in the SSTL_2 data path.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.

  • Enable Signal Is SSTL_2 Compatible
  • Flow-Through Architecture Optimizes PCB Layout
  • Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications
  • Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM
  • Internal 10-k Pulldown Resistors to Ground on B Port
  • Internal 50-k Pullup Resistor on Output-Enable Input
  • Rail-to-Rail Switching on Data I/O Ports
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
Configuration1
Number of channels10
Power supply voltage - single (V)3.3
ProtocolsAnalog
Ron (typ) (Ω)5
ON-state leakage current (max) (µA)1000
Bandwidth (MHz)200
Operating temperature range (°C)-40 to 85
FeaturesPowered-off protection
Input/output continuous current (max) (mA)48
RatingCatalog
Drain supply voltage (max) (V)3.6
Supply voltage (max) (V)3.6
SOIC (DW)24159.65 mm² 15.5 x 10.3
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