The TLV232x operational amplifiers are in a family of devices that has been specifically designed for use in low-voltage single-supply applications. This amplifier is especially well suited to ultra-low-power systems that require devices to consume the absolute minimum of supply currents. Each amplifier is fully functional down to a minimum supply voltage of 2 V, is fully characterized, tested, and specified at both 3-V and 5-V power supplies. The common-mode input voltage range includes the negative rail and extends to within 1 V of the positive rail.
These amplifiers are specifically targeted for use in very low-power, portable, battery-driven applications with the maximum supply current per operational amplifier specified at only 27 uA over its full temperature range of -40°C to 85°C.
Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter applications.
To facilitate the design of small portable equipment, the TLV232x is made available in a wide range of package options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only 1.1 mm makes it particularly attractive when space is critical.
The device inputs and outputs are designed to withstand -100-mA currents without sustaining latch-up. The TLV232x incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices as exposure to ESD can result in the degradation of the device parametric performance.
LinCMOS is a trademark of Texas Instruments Incorporated.
| Number of channels | 4 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 8 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 2 |
| Rail-to-rail | In to V-, Out |
| GBW (typ) (MHz) | 0.085 |
| Slew rate (typ) (V/µs) | 0.03 |
| Vos (offset voltage at 25°C) (max) (mV) | 10 |
| Iq per channel (typ) (mA) | 0.006 |
| Vn at 1 kHz (typ) (nV√Hz) | 68 |
| Rating | Catalog |
| Operating temperature range (°C) | -40 to 85 |
| Offset drift (typ) (µV/°C) | 1.1 |
| Input bias current (max) (pA) | 200 |
| CMRR (typ) (dB) | 94 |
| Iout (typ) (A) | 0.009 |
| Architecture | CMOS |
| Input common mode headroom (to negative supply) (typ) (V) | -0.3 |
| Input common mode headroom (to positive supply) (typ) (V) | -0.8 |
| Output swing headroom (to negative supply) (typ) (V) | 0.095 |
| Output swing headroom (to positive supply) (typ) (V) | -1.2 |
| PDIP (N) | 14 | 181.42 mm² 19.3 x 9.4 |
| SOIC (D) | 14 | 51.9 mm² 8.65 x 6 |
| TSSOP (PW) | 14 | 32 mm² 5 x 6.4 |