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TI(德州仪器) LMC6062
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  • TI(德州仪器) LMC6062
  • TI(德州仪器) LMC6062
  • TI(德州仪器) LMC6062
  • TI(德州仪器) LMC6062
  • TI(德州仪器) LMC6062
  • TI(德州仪器) LMC6062
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LMC6062

LMC6062

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精密 CMOS 双通道微功耗运算放大器

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The LMC6062 is a precision dual low offset voltage, micropower operational amplifier, capable of precision single supply operation. Performance characteristics include ultra low input bias current, high voltage gain, rail-to-rail output swing, and an input common mode voltage range that includes ground. These features, plus its low power consumption, make the LMC6062 ideally suited for battery powered applications.

Other applications using the LMC6062 include precision full-wave rectifiers, integrators, references, sample-and-hold circuits, and true instrumentation amplifiers.

This device is built with TI's advanced double-Poly Silicon-Gate CMOS process.

For designs that require higher speed, see the LMC6082 precision dual operational amplifier.

PATENT PENDING

  • (Typical Unless Otherwise Noted)
  • Low Offset Voltage  100μV
  • Ultra Low Supply current 16μA/Amplifier
  • Operates from 4.5V to 15V Single Supply
  • Ultra Low Input Bias Current 10fA
  • Output Swing within 10mV of Supply Rail, 100k Load
  • Input Common-Mode Range Includes V
  • High Voltage Gain 140dB
  • Improved Latchup Immunity

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Number of channels2
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)15.5
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)4.5
Vos (offset voltage at 25°C) (max) (mV)0.35
GBW (typ) (MHz)0.1
Slew rate (typ) (V/µs)0.035
Rail-to-railIn to V-, Out
Offset drift (typ) (µV/°C)1
Iq per channel (typ) (mA)0.016
Vn at 1 kHz (typ) (nV√Hz)83
CMRR (typ) (dB)85
RatingCatalog
Operating temperature range (°C)-40 to 85
Input bias current (max) (pA)0.1
Iout (typ) (A)0.021
ArchitectureCMOS
Input common mode headroom (to negative supply) (typ) (V)-0.4
Input common mode headroom (to positive supply) (typ) (V)-1.9
Output swing headroom (to negative supply) (typ) (V)0.005
Output swing headroom (to positive supply) (typ) (V)-0.005
THD + N at 1 kHz (typ) (%)0.01
PDIP (P)892.5083 mm² 9.81 x 9.43
SOIC (D)829.4 mm² 4.9 x 6
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