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TI(德州仪器) TL084B
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  • TI(德州仪器) TL084B
  • TI(德州仪器) TL084B
  • TI(德州仪器) TL084B
  • TI(德州仪器) TL084B
  • TI(德州仪器) TL084B
  • TI(德州仪器) TL084B
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TL084B

TL084B

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四通道、30V、3MHz、13V/µs 压摆率、3mV 失调电压、输入接近 V+、JFET 输入运算放大器

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The TL08xH (TL081H, TL082H, and TL084H) family of devices are the next-generation versions of the industry-standard TL08x (TL081, TL082, and TL084) devices. These devices provide outstanding value for cost-sensitive applications, with features including low offset (1 mV, typical), high slew rate (20 V/µs), and common-mode input to the positive supply. High ESD (1.5 kV, HBM), integrated EMI and RF filters, and operation across the full –40°C to 125°C enable the TL08xH devices to be used in the most rugged and demanding applications.

  • High slew rate: 20 V/µs (TL08xH, typ)
  • Low offset voltage: 1 mV (TL08xH, typ)
  • Low offset voltage drift: 2 µV/°C
  • Low power consumption: 940 µA/ch (TL08xH, typ)
  • Wide common-mode and differential voltage ranges
    • Common-mode input voltage range includes VCC+
  • Low input bias and offset currents
  • Low noise: Vn = 18 nV/√Hz (typ) at f = 1 kHz
  • Output short-circuit protection
  • Low total harmonic distortion: 0.003% (typ)
  • Wide supply voltage: ±2.25 V to ±20 V, 4.5 V to 40 V
Number of channels4
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)30
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)7
Rail-to-railIn to V+
GBW (typ) (MHz)3
Slew rate (typ) (V/µs)13
Vos (offset voltage at 25°C) (max) (mV)3
Iq per channel (typ) (mA)1.4
Vn at 1 kHz (typ) (nV√Hz)18
RatingCatalog
Operating temperature range (°C)0 to 70
Offset drift (typ) (µV/°C)18
FeaturesStandard Amps
Input bias current (max) (pA)200
CMRR (typ) (dB)86
Iout (typ) (A)0.01
ArchitectureFET
Input common mode headroom (to negative supply) (typ) (V)3
Input common mode headroom (to positive supply) (typ) (V)0
Output swing headroom (to negative supply) (typ) (V)1.5
Output swing headroom (to positive supply) (typ) (V)-1.5
PDIP (N)14181.42 mm² 19.3 x 9.4
SOIC (D)1451.9 mm² 8.65 x 6
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