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TI(德州仪器) OPA627
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  • TI(德州仪器) OPA627
  • TI(德州仪器) OPA627
  • TI(德州仪器) OPA627
  • TI(德州仪器) OPA627
  • TI(德州仪器) OPA627
  • TI(德州仪器) OPA627
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OPA627

OPA627

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55V/µS、高速、0.8µV/˚C 最大漂移、精密运算放大器

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  • 封装 | 引脚 | 尺寸

The OPA6x7 Difet operational amplifiers provide a new level of performance in a precision FET operational amplifier. When compared to the popular OPA111 operational amplifier, the OPA6x7 has lower noise, lower offset voltage, and higher speed. The OPA6x7 is useful in a broad range of precision and high speed analog circuitry.

The OPA6x7 is fabricated on a high-speed, dielectrically-isolated complementary NPN/PNP process. It operates over a wide range of power supply voltage of ±4.5 V to ±18 V. Laser-trimmed Difet input circuitry provides high accuracy and low-noise performance comparable with the best bipolar-input operational amplifiers.

High frequency complementary transistors allow increased circuit bandwidth, attaining dynamic performance not possible with previous precision FET operational amplifiers. The OPA627 is unity-gain stable. The OPA637 is stable in gains equal to or greater than five.

Difet fabrication achieves extremely low input bias currents without compromising input voltage noise performance. Low input bias current is maintained over a wide input common-mode voltage range with unique cascode circuitry.

The OPA6x7 is available in plastic PDIP, SOIC, and metal TO-99 packages. Industrial and military temperature range models are available.

  • Very Low Noise: 4.5 nV/√Hz at 10 kHz
  • Fast Settling Time:
    • OPA627—550 ns to 0.01%
    • OPA637—450 ns to 0.01%
  • Low VOS: 100-µV maximum
  • Low Drift: 0.8-µV/°C maximum
  • Low IB: 5-pA maximum
  • OPA627: Unity-Gain Stable
  • OPA637: Stable in Gain ≥ 5
Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)36
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)9
Vos (offset voltage at 25°C) (max) (mV)0.1
GBW (typ) (MHz)16
FeaturesBurr-Brown™ Audio
Slew rate (typ) (V/µs)55
Rail-to-railNo
Offset drift (typ) (µV/°C)0.4
Iq per channel (typ) (mA)7
Vn at 1 kHz (typ) (nV√Hz)5.2
CMRR (typ) (dB)110
RatingCatalog
Operating temperature range (°C)-25 to 85
Input bias current (max) (pA)5
Iout (typ) (A)0.045
ArchitectureFET
Input common mode headroom (to negative supply) (typ) (V)3.5
Input common mode headroom (to positive supply) (typ) (V)-3.5
Output swing headroom (to negative supply) (typ) (V)2.7
Output swing headroom (to positive supply) (typ) (V)-2.7
THD + N at 1 kHz (typ) (%)0.00003
SOIC (D)829.4 mm² 4.9 x 6
TO-CAN (LMC)880.2816 mm² 8.96 x 8.96
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