The TLE202x, TLE202xA, and TLE202xB devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments Excalibur process. These devices combine the best features of the OP21 with highly improved slew rate and unity-gain bandwidth.
The complementary bipolar Excalibur process utilizes isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. This means that a precision device remains a precision device even with changes in temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices the ideal choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs goes below the negative supply rail.
A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from 40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of 55°C to 125°C.
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| Number of channels | 2 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 40 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 4 |
| Vos (offset voltage at 25°C) (max) (mV) | 0.4 |
| GBW (typ) (MHz) | 1.7 |
| Slew rate (typ) (V/µs) | 0.5 |
| Rail-to-rail | In to V- |
| Offset drift (typ) (µV/°C) | 2 |
| Iq per channel (typ) (mA) | 0.2 |
| Vn at 1 kHz (typ) (nV√Hz) | 17 |
| CMRR (typ) (dB) | 110 |
| Rating | Catalog |
| Operating temperature range (°C) | 0 to 70 |
| Input bias current (max) (pA) | 70000 |
| Iout (typ) (A) | 0.003 |
| Architecture | Bipolar |
| Input common mode headroom (to negative supply) (typ) (V) | -0.3 |
| Input common mode headroom (to positive supply) (typ) (V) | -1 |
| Output swing headroom (to negative supply) (typ) (V) | 0.7 |
| Output swing headroom (to positive supply) (typ) (V) | -0.7 |
| PDIP (P) | 8 | 92.5083 mm² 9.81 x 9.43 |
| SOIC (D) | 8 | 29.4 mm² 4.9 x 6 |