| Number of channels | 4 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) | 36 |
| Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) | 10 |
| Vos (offset voltage at 25°C) (max) (mV) | 1 |
| GBW (typ) (MHz) | 6.4 |
| Slew rate (typ) (V/µs) | 35 |
| Rail-to-rail | No |
| Offset drift (typ) (µV/°C) | 3 |
| Iq per channel (typ) (mA) | 9.3 |
| Vn at 1 kHz (typ) (nV√Hz) | 15 |
| CMRR (typ) (dB) | 100 |
| Rating | Catalog |
| Operating temperature range (°C) | 0 to 70 |
| Input bias current (max) (pA) | 8 |
| Iout (typ) (A) | 0.027 |
| Architecture | FET |
| Input common mode headroom (to negative supply) (typ) (V) | 4 |
| Input common mode headroom (to positive supply) (typ) (V) | -2 |
| Output swing headroom (to negative supply) (typ) (V) | 1.2 |
| Output swing headroom (to positive supply) (typ) (V) | -1.8 |
| CDIP_SB (JD) | 14 | 138.9395 mm² 18.55 x 7.49 |
| PDIP (N) | 14 | 181.42 mm² 19.3 x 9.4 |
| SOIC (DW) | 16 | 106.09 mm² 10.3 x 10.3 |
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