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TI(德州仪器) OPA27
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  • TI(德州仪器) OPA27
  • TI(德州仪器) OPA27
  • TI(德州仪器) OPA27
  • TI(德州仪器) OPA27
  • TI(德州仪器) OPA27
  • TI(德州仪器) OPA27
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OPA27

OPA27

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超低噪声 (4.5nV/√Hz)、100µV 失调电压、单位增益稳定精密运算放大器

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  • 说明
  • 特性
  • 参数
  • 封装 | 引脚 | 尺寸

The OPA27 and OPA37 are ultra-low noise, high-precision monolithic operational amplifiers.

Laser-trimmed thin-film resistors provide excellent long-term voltage offset stability and allow superior voltage offset compared to common zener-zap techniques.

A unique bias current cancellation circuit allows bias and offset current specifications to be met over the full –40°C to +85°C temperature range.

The OPA27 is internally compensated for unity-gain stability. The decompensated OPA37 requires a closed-loop gain 5.

The Texas Instruments’ OPA27 and OPA37 are improved replacements for the industry-standard OP-27 and OP-37.

  • LOW NOISE: 4.5nV/Hz max at 1kHz
  • LOW OFFSET: 100µV max
  • LOW DRIFT: 0.4µV/°C
  • HIGH OPEN-LOOP GAIN: 117dB min
  • HIGH COMMON-MODE REJECTION: 100dB min
  • HIGH POWER-SUPPLY REJECTION: 94dB min
  • FITS OP-07, OP-05, AD510, AND AD517 SOCKETS
  • APPLICATIONS
    • PRECISION INSTRUMENTATION
    • DATA ACQUISITION
    • TEST EQUIPMENT
    • PROFESSIONAL AUDIO EQUIPMENT
    • TRANSDUCER AMPLIFIERS
    • RADIATION HARD EQUIPMENT

All trademarks are the property of their respective owners.

Number of channels1
Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V)44
Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V)8
Vos (offset voltage at 25°C) (max) (mV)0.22
GBW (typ) (MHz)8
Slew rate (typ) (V/µs)1.9
Rail-to-railNo
Offset drift (typ) (µV/°C)0.4
Iq per channel (typ) (mA)3.3
Vn at 1 kHz (typ) (nV√Hz)3.2
CMRR (typ) (dB)122
RatingCatalog
Operating temperature range (°C)-40 to 85
Input bias current (max) (pA)80000
Iout (typ) (A)0.025
ArchitectureBipolar
Input common mode headroom (to negative supply) (typ) (V)3.2
Input common mode headroom (to positive supply) (typ) (V)-3.2
Output swing headroom (to negative supply) (typ) (V)1.2
Output swing headroom (to positive supply) (typ) (V)-1.2
PDIP (P)892.5083 mm² 9.81 x 9.43
SOIC (D)829.4 mm² 4.9 x 6
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